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Through Silicon Vias in MEMS packaging, a review

Abstract

Trough Silicon Via (TSV) is a key enabling technology to achieve the integration of various dies by exploiting the third dimension. This allow the integration of heterogeneous chips in a single package (2.5D integration) or to achieve higher integration densities of transistors (3D integration). These vertical interconnections are widely used for both IC and MEMS devices. This paper reviews TSV technology focusing on their implementation in MEMS sensors with a broad overview on the various fabrication approaches and their constraints in terms of process compatibility. A case study of an inertial MEMS sensor will then be presented.
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Category

Conference lecture

Language

English

Author(s)

Affiliation

  • SINTEF Digital / Smart Sensors and Microsystems

Presented at

NordPac 2019

Place

Lyngby

Date

11.06.2019 - 13.06.2019

Organizer

IMAPS Nordic

Year

2019

View this publication at Norwegian Research Information Repository