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Strategy for reliable strain measurement in InAs/GaAs materials from high-resolution Z-contrast STEM images

Abstract

Geometric phase analysis (GPA), a fast and simple Fourier space method for strain analysis, can give useful information on accumulated strain and defect propagation in multiple layers of semiconductors, including quantum dot materials. In this work, GPA has been applied to high resolution Z-contrast scanning transmission electron microscopy (STEM) images. Strain maps determined from different g vectors of these images are compared to each other, in order to analyze and assess the GPA technique in terms of accuracy. The SmartAlign tool has been used to improve the STEM image quality getting more reliable results. Strain maps from template matching as a real space approach are compared with strain maps from GPA, and it is discussed that a real space analysis is a better approach than GPA for aberration corrected STEM images.
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Category

Academic article

Language

English

Author(s)

  • Maryam Vatanparast
  • Per Erik Vullum
  • Magnus Kristofer Nord
  • Jian Min Zuo
  • Turid Worren Reenaas
  • Randi Holmestad

Affiliation

  • SINTEF Industry / Materials and Nanotechnology
  • University of Glasgow
  • Norwegian University of Science and Technology
  • University of Illinois at Urbana-Champaign

Year

2017

Published in

Journal of Physics: Conference Series (JPCS)

ISSN

1742-6588

Volume

902

Issue

012021

View this publication at Norwegian Research Information Repository