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HERA-B Detectors with P-spray Isolaton on th N-side; Unirradiated Results

Abstract

P-spray isolation of double-sided detectors is investigated by computer simulations and measurements on full-size detector prototypes. Simulations showed that boron p-spray implant doses 4.10(12), 6.10(12), and 8.10(12) cm(-2) and implant energy 60 keV would yield breakdown voltages above 200V for unirradiated detectors with oxide charge 2.10(11) cm(-2). The simulations showed that the breakdown voltage decreases with increasing p-spray dose. According to the computer simulations, the detectors should perform equally well after irradiation giving an oxide charge of 1.10(12)cm(-2). HERA-B strip detectors with p-spray isolation were manufactured, using the three simulated doses. The average breakdown voltages and standard deviations were 167 +/- 31 V for the 4.10(12) cm(-2) dose, 151 +/- 16 V for the 6.10(12) cm(-2) dose, and 127 +/- 13 V for the 8.10(12) cm(-2) dose. The measured decrease in breakdown voltage is in good agreement with the computer simulations.

Category

Academic article

Language

English

Author(s)

  • Kari Schjølberg-Henriksen
  • T Westgaard
  • Berit Sundby Avset

Affiliation

  • SINTEF Digital / Microsystems and Nanotechnology

Year

2000

Published in

IEEE Transactions on Nuclear Science

ISSN

0018-9499

Publisher

IEEE

Volume

47

Issue

4, part 1

Page(s)

1371 - 1374

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