PZT thin films are used extensively in micro electromechanical systems (MEMS) due to its high piezoelectric coefficients. The electromechanical responses can be optimized by using textured films where the transverse coefficient e31,f is of particular importance for MEMS structures such as cantilevers, bridges and membranes. It has been shown that (100)-textured PZTofmorphotropic composition fabricated by chemical solution deposition (CSD) provides the highest transverse coefficient. This specific texture can be obtained using a seeding layer of sputter deposited PbTiO3. However, in a CSD process it is advantageous to also be able to produce the seed layer by chemical methods. The piezoelectric and dielectric properties of 2 μm PZT film seeded by CSD PbTiO3 measured by a new 4-point bending setup are presented.