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An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

Abstract

The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.

Category

Academic article

Language

English

Author(s)

  • Margrethe Holmer Rein
  • M.V. Hohmann
  • Annett Thøgersen
  • Jeyanthinath Mayandi
  • Arve Holt
  • A Klein
  • Edouard Monakhov

Affiliation

  • Institute for Energy Technology
  • Darmstadt University of Technology
  • SINTEF Industry / Sustainable Energy Technology
  • Madurai Kamaraj University
  • University of Oslo

Year

2013

Published in

Applied Physics Letters

ISSN

0003-6951

Publisher

American Institute of Physics (AIP)

Volume

102

Issue

2

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