PZT and AlN The ceramic materials PZT (lead zirconate titanate, Pb[Zr,Ti]O3) and AlN (aluminium nitride) are two of the most efficient piezoelectric materials. The MEMS-pie project develops robust and flexible fabrication routes for piezoelectric MEMS with these two materials. The procedures are based on knowledge obtained through previous research activities. PZT is deposited by chemical solution deposition (CSD), RF magnetron sputtering and pulsed laser deposition (PLD), whereas AlN is deposited by reactive RF magnetron sputtering only.
Test production Qualified procedures are developed through processing and analysis of test wafers. The test wafer design contains more than 500 device elements of sizes between 10 µm and 1 mm. The device elements are cantilevers, plates, bridges and fixed membranes.
Published February 10, 2006
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