A system for automated poling and testing of the devices at wafer level has been developed. The wafer is mounted on a programmable xyz-table with a heating chuck. The devices are addressed sequentially and can be poled and tested individually at up to 160 °C. C(V) and I(V) measurements are routinely carried out and the system is to be integrated with an aixACCT TF2000 ferroelectric analyzer that will enable automatic measurements, including: • polarisation hysteresis, • fatigue behaviour, • impedance sweeps (for electromechanical characterisation including determination of mechanical resonances).
New testing method
The project has developed a new 4-point bending set-up for measurement of piezoelectric and dielectric charges at a substrate that is bent into a constant curvature . The bending amplitude is measured by an interferometer and is used for determining the transversal piezoelectric charge coefficient, e31,f. Samples for this test set-up have been included in the test wafer. The same set-up and samples can also be used for d33 measurements.
Automated probe station for automatic poling and mapping of device performance across a wafer
Published February 10, 2006
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