High temperature E-Beam chamber

High temperature E-Beam chamber

The high temperature E-beam chamber is a special addition to advanced cluster system for thin film deposition, The cluster system consist of two sputtering chambers and a high temperature E-beam chamber.

Deposition of Si for PV
High temperature E-beam chamber
Published 01 March 2021
Senior Research Scientist
99 02 44 33

Contact information

  •  Si deposition only
  • Substrate heating to 1000°C
  • Allows for in situ growth of crystalline Si at much lower T than CVD methods
  • RHEED - monitoring of epitaxial growth
  • Film deposition rate monitoring (QCM)
  • Introduction of H2 before/during deposition to remove oxide layers from substrate