High temperature E-Beam chamber
High temperature E-Beam chamber
High temperature E-Beam chamber
The high temperature E-beam chamber is a special addition to advanced cluster system for thin film deposition, The cluster system consist of two sputtering chambers and a high temperature E-beam chamber.
Contact information
- Si deposition only
- Substrate heating to 1000°C
- Allows for in situ growth of crystalline Si at much lower T than CVD methods
- RHEED - monitoring of epitaxial growth
- Film deposition rate monitoring (QCM)
- Introduction of H2 before/during deposition to remove oxide layers from substrate