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Fabrication process for CMUT arrays with polysilicon electrodes, nanometre precision cavity gaps and through-silicon vias

Sammendrag

Capacitive micromachined ultrasound transducers (CMUTs) can be used to realize miniature ultrasound probes. Through-silicon vias (TSVs) allow for close integration of the CMUT and read-out electronics. A fabrication process enabling the realization of a CMUT array with TSVs is being developed. The integrated process requires the formation of highly doped polysilicon electrodes with low surface roughness. A process for polysilicon film deposition,
doping, CMP, RIE and thermal annealing that resulted in a film with sheet resistance of 4.0 Ohm per square and a surface roughness of 1 nm rms has been developed. The surface roughness of the polysilicon film was found to increase with higher phosphorus concentrations. The surface
roughness also increased when oxygen was present in the thermal annealing ambient. The RIE process for etching CMUT cavities in the doped polysilicon gave a mean etch depth of
59.2 ± 3.9 nm and a uniformity across the wafer ranging from 1.0 to 4.7%. The two presented processes are key processes that enable the fabrication of CMUT arrays suitable for applications in for instance intravascular cardiology and gastrointestinal imaging.

Kategori

Vitenskapelig artikkel

Språk

Engelsk

Forfatter(e)

Institusjon(er)

  • SINTEF Digital / Smart Sensors and Microsystems
  • Norges teknisk-naturvitenskapelige universitet

År

2012

Publisert i

Journal of Micromechanics and Microengineering (JMM)

ISSN

0960-1317

Forlag

IOP Publishing

Årgang

22

Hefte nr.

7

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