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Beam tests of silicon pixel 3D-sensors developed at SINTEF

Sammendrag

For the purpose of withstanding very high radiation doses, silicon pixel sensors with a
‘3D’ electrode geometry are being developed. Detectors of this kind are highly interesting for harch
radiation environments such as expected in the High Luminosity LHC, but also for space physics
and medical applications. In this paper, prototype sensors developed at SINTEF are presented and
results from tests in a pion beam at CERN are given. These tests show that these 3D sensors perform
as expected with full efficiency at bias voltages between 5 and 15V
Les publikasjonen

Kategori

Vitenskapelig artikkel

Oppdragsgiver

  • Research Council of Norway (RCN) / 255182

Språk

Engelsk

Forfatter(e)

  • Ole Dorholt
  • Thor-Erik Hansen
  • Andreas Løkken Heggelund
  • Angela Kok
  • Nicola Pacifico
  • Ole Myren Røhne
  • Heidi Sandaker
  • Bjarne Stugu
  • Zongchang Yang
  • Marco Bomben
  • André Rummler
  • Jens Weingarten

Institusjon(er)

  • Universitetet i Oslo
  • Diverse norske bedrifter og organisasjoner
  • Universitetet i Bergen
  • SINTEF Digital / Smart Sensors and Microsystems
  • Centre national de la recherche scientifique
  • Laboratoire de Physique des Particules (IN2P3-CNRS-Univ Savoie)
  • Georg-August-Universität Göttingen

År

2018

Publisert i

Journal of Instrumentation (JINST)

ISSN

1748-0221

Forlag

IOP Publishing

Årgang

13

Hefte nr.

8

Side(r)

1 - 10

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