Sputtering of PZT
New technologies of heating and RF deposition have to be developed for volume production of in situ grown perovskite phase PZT. A prototype from Oerlikon, available at the project start, will allow the development of the specification for the new components.

For latest results, please see Project results.

The development of an automatic industrial sputter deposition tool for PZT films is one specific goals of the piezoVolume project. For the film deposition a single ceramic target is sputtered by RF magnetron technology onto a (very) hot substrate. The deposition equipment has to be able to provide a sufficiently high substrate temperature to allow the direct growth of the piezoelectric perovskite phase of PZT, so that the disadvantages of a subsequent post annealing step can be avoided.
piezoVolume will increase the quality and throughput of sputtered PZT by:
  • Developing a sputtering tool with improved substrate temperature control and better power distribution for direct growth of PZT at high temperature (600-700 oC).
  • Evaluating sputtering parameters for optimal growth at high power. Target deposition speed 1 nm/s (3.6 wafers/h µm).
  • Developing sputtering parameters for industrial high quality deposition on 200 mm wafers with thickness uniformity ± 5 %
Sputter cluster Hot chuck Oerlikon
Oerlikon Single Wafer Cluster Tool for state of the art PVD, Soft Etch and PECVD applications   Hot chuck from Oerlikon


Published April 22, 2010

The research leading to these results has received funding from the European Community's Seventh Framework Programme (FP7/2010-2013) under grant agreement n° 229196