Abstract
3D active edge sensors have advantages such as radiation hardness and edgeless capability. With the use of deep reactive ion etching and wafer bonding, 18.5 by 20.5 mm2 3D detectors with active edges have been successfully fabricated at SINTEF MiNaLab. These sensors are compatible with the ATLAS FE-I4 readout electronics. Fabrication process and difficulties are presented and the preliminary electrical measurements are also discussed.