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Characterization of B-implanted 3C-SiC for intermediate band solar cells

Abstract

Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×1017 atoms/cm2 in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 °C for 60 min. An anomalous area in the center was observed in the PL emission pattern. The SIMS analysis indicated that the B concentration was the same both within and outside the anomalous area. The buried boron box-like concentration profile can reach ~3×1021 cm-3 in the plateau region. In the anomalous area a broad emission band (possible IB) emerges at around ~1.7-1.8 eV, which may be associated with B-precipitates having a sufficiently high density.








Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×1017 atoms/cm2 in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 °C for 60 min. An anomalous area in the center was observed in the PL emission pattern. The SIMS analysis indicated that the B concentration was the same both within and outside the anomalous area. The buried boron box-like concentration profile can reach ~3×1021 cm-3 in the plateau region. In the anomalous area a broad emission band (possible IB) emerges at around ~1.7-1.8 eV, which may be associated with B-precipitates having a sufficiently high density.

Category

Academic article

Client

  • Research Council of Norway (RCN) / 510033
  • Research Council of Norway (RCN) / 197405
  • Research Council of Norway (RCN) / 229711
  • Research Council of Norway (RCN) / nn2615k
  • Research Council of Norway (RCN) / NN2615K

Language

English

Author(s)

Affiliation

  • University of Oslo
  • SINTEF Industry / Sustainable Energy Technology
  • SINTEF Digital / Smart Sensors and Microsystems
  • Linköping University

Year

2017

Published in

Materials Science Forum

ISSN

0255-5476

Publisher

Trans Tech Publications

Volume

897

Page(s)

299 - 302

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