Skilled technicians and scientists, using a range of methods and equipment, will ensure that the properties of silicon ingots and wafers are well established. In our facilities, we offer the following equipment for analysis/characterization of silicon materials:

• Sinton Consulting WCT-100 - Life time of minority charge carriers by Quasi Steady State - Photo Conductance (QSSPC)
• Unit built for measurement of life times directly on unpassivated silicon blocks
• Jandel Scientific - 4-point electrical resistivity measurement
• PVScan 6000 - Unique equipment for advanced optical characterization of silicon wafers
• Mapping of dislocations, coarse in elusion and grain boundaries
• Light Beam Induced Current (LBIC) mapping of solar cell efficiency
• Reflectivity mapping
• Hitachi FEGSEM and FEGTEM (Field Emission Gun Scanning/Transmission Electron Microscopy) – High resolution electron microscopy
• Determination of crystal orientation in silicon grains
• Visualisation and analysis of defects and inclusions
• Thermo Element II GDMS (Glow Discharge Mass Spectroscopy) Elemental impurity analysis in solid samples
• For detection of trace element in Si and other materials
• Detection limit in the ppb range