At SINTEF MiNaLab, wafer bonding is a key technology in the realization of several of our devices.  We offer a wafer bonding foundry service. In addition, we do feasibility studies, process development, and technology evaluation on wafer-to-wafer and chip-to-wafer bonding. We have worked with different types of wafer bonding as listed below.

• High-temperature direct wafer bonding (fusion bonding) of silicon to surfaces of silicon, SiO2 and Si3N4. Double-, triple- and quadruple stacks have been realised.
• Low-temperature direct wafer bonding (plasma/surface activated bonding) of Si and SiO2 surfaces.
• Anodic wafer bonding of glass-Si, glass-SiO2, glass-Si3N4, and glass-Al. The stacks included 2 – 4 wafers.
• Thermocompression wafer scale bonding of  gold-to-gold.
• Adhesive wafer bonding using BCB.
• Eutectic wafer scale bonding of AuSn and AuSi.
• Chip-to-wafer bonding applying Au stud bump bonding, SnAg microbumps and the Solid-Liquid InterDiffusion technology using SnCu-Sn

Contact person: Sigurd T. Moe

Single test chips bonded to a substrate wafer by chip-to-wafer bonding. Three bonding technologies were compared in a feasibility study on 3D-integration of MEMS: Au stud bump bonding, SnAg microbumps and the Solid-Liquid InterDiffusion technology using SnCu-Sn.