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Spyridon Diplas

Research Manager

Spyridon Diplas

Research Manager

Spyridon Diplas
Phone: 982 30 427
Mobile: 982 30 427
Department: Materials and Nanotechnology
Office: Oslo

Publications and responsibilities

Publications

Publication

Cubic silicon carbide as a potential photovoltaic material

http://www.sintef.no/en/publications/publication/?pubid=CRIStin+1308673

In this work we present a significant advancement in cubic silicon carbide (3C-SiC) growth in terms of crystal quality and domain size, and indicate its potential use in photovoltaics. To date, the use of 3C-SiC for photovoltaics has not been considered due to the band gap of 2.3 eV being too large ...

Authors Syväjärvi Mikael Ma Quanbao Jokubavicius Valdas Galeckas Augustinas Sun Jianwu Liu Xinyu Jansson Mattias Wellmann Peter Linnarsson Margareta Runde Paal Johansen Bertil Thøgersen Annett Diplas Spyridon Carvalho Patricia Almeida Løvvik Ole Martin Wright Daniel Nilsen Azarov Alexander Svensson Bengt Gunnar
Year 2016
Type Journal article
Publication

Boron-implanted 3C-SiC for intermediate band solar cells

http://www.sintef.no/en/publications/publication/?pubid=CRIStin+1308759

Sublimation-grown 3C-SiC crystals were implanted with 2 atomic percent of boron ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 8.5×1016 atoms/cm2. The samples were then annealed at 1400, 1500 and 1600 °C for 1h at each temperature. The buried boro...

Authors Ma Quanbao Galeckas Augustinas Azarov Alexander Thøgersen Annett Carvalho Patricia Almeida Wright Daniel Nilsen Diplas Spyridon Løvvik Ole Martin Jokubavicius Valdas Liu Xinyu Sun Jianwu Syväjärvi Mikael Svensson Bengt Gunnar
Year 2016
Type Journal article
Publication

An in situ XPS study of growth of ITO on amorphous hydrogenated Si: Initial stages of heterojunction formation upon processing of ITO/a-Si:H based solar cell structures

http://www.sintef.no/en/publications/publication/?pubid=CRIStin+1238895

In this work we studied the interface growth upon deposition of indium-tin oxide (ITO) on amorphous hydrogenated Si (a-Si:H)/crystalline Si (c-Si) structures. The analysis methods used were X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) in combination with in...

Year 2015
Type Journal article
Publication

Liquid metal embrittlement of aluminium by segregation of trace element gallium

http://www.sintef.no/en/publications/publication/?pubid=CRIStin+1169447

The effect of small amounts of gallium on liquid metal embrittlement of model binary AlGa alloys containing 50–1000 ppm2 Ga is studied. Ga segregation did not occur by annealing in the temperature range 300–600 °C because of the high solid solution solubility of Ga in aluminium. Alkaline etching cau...

Authors Senel Esma Walmsley John Charles Diplas Spyridon Nisancioglu Kemal
Year 2014
Type Journal article
Publication

One-step formation of nanostructures on silicon surfaces using pure hydrogen-radical-initiated reactions

http://www.sintef.no/en/publications/publication/?pubid=CRIStin+1114902

One-step formation of silicon nanowires, sheets, and texture surface on a silicon substrate has been achieved using hydrogen-radical etching reactions. Metallic tungsten and for comparison purposes a tungsten hot wire, were used as catalysts for the hydrogen-molecular cracking. It was shown that a v...

Authors Nagayoshi Hiroshi Diplas Spyridon Walmsley John Charles Andersen Niels Højmark Karlsson Arne Graff Joachim Seland Chirvony Vladimir Pastor Juan M. Ulyashin Alexander G.
Year 2014
Type Journal article
Publication

Effects of temperature, triazole and hot-pressing on the performance of TiO2 photoanode in a solid-state photoelectrochemical cell

http://www.sintef.no/en/publications/publication/?pubid=CRIStin+1114969

The photocurrent of hydrogen generating solid-state photoelectrochemical cell utilising a polybenzimidazole proton-conducting membrane and gaseous anode reactants has been enhanced by operation at higher temperatures. With a bias of 0 V for example, photocurrent increased from 15 to 30 μA/cm2 on mov...

Authors Iwu Kingsley Odinaka Galeckas Augustinas Diplas Spyridon Seland Frode Kuznetsov Andrej Norby Truls
Year 2014
Type Journal article
Publication

Conducting properties of In2O3:Sn thin films at low temperatures

http://www.sintef.no/en/publications/publication/?pubid=CRIStin+1114983

Electrical conductivity, Hall effect and magnetoresistance of In2O3:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, have been investigated in the temperature range 4.2–300 K. The observed temperature dependences of resistivity for films deposited at 230 ...

Authors Kytin V.G Kulbachinskii V.A Reukova O.V Galperin Yuri Johansen Tom Henning Diplas Spyridon Ulyashin Alexander G.
Year 2014
Type Journal article
Publication

Initial stages of ITO/Si interface formation: In situ x-ray photoelectron spectroscopy measurements upon magnetron sputtering and atomistic modelling using density functional theory

http://www.sintef.no/en/publications/publication/?pubid=CRIStin+1160960

Initial stages of indium tin oxide (ITO) growth on a polished Si substrate upon magnetron sputtering were studied experimentally using in-situ x-ray photoelectron spectroscopy measurements. The presence of pure indium and tin, as well as Si bonded to oxygen at the ITO/Si interface were observed. The...

Year 2014
Type Journal article
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