The MEMS-pie project:
Piezoelectric microsystems from the laboratory to production

                                              

  Sixth Framework Programme

 

New method for e31 measurements
The project has developed a new 4-point bending set-up for measurement of piezoelectric and dielectric charges at a substrate that is bent into a constant curvature (Patent pending, German Patent and Trade Mark Office, Akz 10 2005 006 958.4). The bending amplitude is measured by an interferometer and is used for determining the transversal piezoelectric charge coefficient, e31,f. Samples for this test set-up have been included in the test wafer. The same set-up and samples can also be used for d33 measurements. 
Measurements by aixACCT Systems GmbH using a newly developed 4-point bending method


 


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Published October 27, 2006

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